BFT46 |
RFQ for BFT46 Required Field |
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| Technical/Catalog Information | BFT46,215 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 200A @ 10V |
| Gate to Source Voltage (Vgs Max) | * |
| Input Capacitance (Ciss) @ Vds | 5pF @ 10V |
| Power - Max | 250mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | SST3 (SOT-23-3) |
| Voltage - Cutoff (VGS off) @ Id | 1.2V @ 0.5nA |
| Voltage - Breakdown (V(BR)GSS) | - |
| Resistance - RDS(On) | - |
| Current Drain (Id) - Max | 10mA |
| Drawing Number | 568; SOT23; ; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BFT46,215 BFT46,215 |
| Product | Manufacturers | Pack | D/C |
| BFT46 | - | SOT-23 | 00+ |
Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits.
Typical Application |
| These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. |
